SPP8803B
P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP8803B is the Dual P-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching .
FEATURES -20V/-7.
0A,RDS(ON)=22mΩ@VGS=-4.
5V -20V/-6.
0 A,RDS(ON)=28mΩ@VGS=-2.
5V -20V/-5.
0 A, , RDS(ON)=40mΩ@VGS=-1.
8V Super high density cell design for extremely
Low RDS (ON) Exceptional on-resistance and maximum
DC current capability ...