SPC4533W
N & P Pair Enhancement Mode MOSFET
DESCRIPTION The SPC4533W is the N- and P-Channel enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed.
FEATURES N-Channel
30V/10A,RDS(ON)=25mΩ@VGS=10V 30V/8.
0A,RDS(ON)=36mΩ@VGS=4.
5V P-Channel -30V/-6.
0A,RDS(ON)=42mΩ@VGS=-10V -30V/-3.
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