SPN9926W
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN9926W is the Dual N-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching .
FEATURES 20V/4.
0A,RDS(ON)=55mΩ@VGS=4.
5V 20V/3.
4A,RDS(ON)=70mΩ@VGS=2.
5V 20V/2.
8A,RDS(ON)=90mΩ@VGS=1.
8V Super high density cell design for extremely low
RDS(ON) Exceptional on-resistance and maximum DC
current capability SOP–8 package...