SPP4953B
P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP4953B is the Dual P-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching .
FEATURES -30V/-5.
4A,RDS(ON)= 65mΩ@VGS=- 10V -30V/-4.
0A,RDS(ON)= 95mΩ@VGS=-4.
5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOP – 8P package design APPLICATIONS z...