SPN2622
Dual N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN2622 is the Dual N-Channel enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed.
APPLICATIONS z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LC...