SPN3006
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN3006 is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology.
The SPN3006 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
APPLICATIONS High Frequency Synchronous Buck Converter DC/DC Power System Load Switch
FEATURES
30V/80A,RDS(ON)=4.
7mΩ@VGS=10V 30V/80A,RDS(ON)=7.
5mΩ@VGS=4.
5V Super high density cell design for extremely low
RDS (ON) Exceptional on-resistanc...