SMD Type
MOSFET
MOS Field Effect
Transistor 2SK3511
TO-263
+0.
1 1.
27-0.
1
Unit: mm
+0.
1 1.
27-0.
1 +0.
2 4.
57-0.
2
Features
Super low on-state resistance: RDS(on) = 12.
5 m MAX.
(VGS = 10 V, ID = 42 A)
+0.
2 8.
7-0.
2
Low Ciss: Ciss = 5900 pF TYP.
Built-in gate protection diode
+0.
1 1.
27-0.
1
0.
1max
+0.
1 0.
81-0.
1
+0.
2 5.
28-0.
2
2.
54 5.
08
+0.
1 -0.
1
+0.
2 2.
54-0.
2
+0.
2 15.
25-0.
2
+0.
2 2.
54-0.
2
+0.
2 0.
4-0.
2
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 75 20 83 260 100 1.
5 150 -55 to +150 Unit V V A...