Part Number
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FDC8601 |
Manufacturer
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Fairchild Semiconductor |
Description
|
N-Channel Shielded Gate PowerTrench MOSFET |
Published
|
Aug 3, 2014 |
Detailed Description
|
FDC8601 N-Channel Shielded Gate PowerTrench® MOSFET
May 2013
FDC8601
N-Channel Shielded Gate PowerTrench® MOSFET
100 V...
|
Datasheet
|
FDC8601
|
Overview
FDC8601 N-Channel Shielded Gate PowerTrench® MOSFET
May 2013
FDC8601
N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 2.
7 A, 109 mΩ
Features
Shielded Gate MOSFET Technology Max rDS(on) = 109 mΩ at VGS = 10 V, ID = 2.
7 A Max rDS(on) = 176 mΩ at VGS = 6 V, ID = 2.
1 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Fast switching speed 100% UIL Tested RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for rDS(on), switching per...
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