TSM2611ED 20V Dual N-Channel MOSFET w/ESD Protected SOT-26 Pin Definition: 1.
Source 1 6.
Gate 1 2.
Drain 1 5.
Drain 2 3.
Source 2 4.
Gate 2 PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 20 @ VGS = 4.
5V 20 28 @ VGS = 2.
5V ID (A) 6 5 Features ● ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On resistance ESD Protected HBM 2KV Block Diagram Application ● ● Portable Applications Battery Management Ordering Information Part No.
TSM2611EDCX6 RFG Package SOT-26 Packing 3Kpcs / 7” Reel ` Dual N-Channel MOSFET Note: “G” denotes Halogen Free Product.
Absolute Maximum Rating (TA=25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Dr...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)