Part Number
|
IRFR4104PbF |
Manufacturer
|
International Rectifier |
Description
|
Power MOSFET |
Published
|
Aug 7, 2014 |
Detailed Description
|
PD - 95425B
IRFR4104PbF IRFU4104PbF
HEXFET® Power MOSFET
Features
l l l l l l
Advanced Process Technology Ultra Low On...
|
Datasheet
|
IRFR4104PbF
|
Overview
PD - 95425B
IRFR4104PbF IRFU4104PbF
HEXFET® Power MOSFET
Features
l l l l l l
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free
D
VDSS = 40V RDS(on) = 5.
5mΩ
G S
ID = 42A
Description
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
D-Pak IRFR4104PbF...
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