Part Number
|
SEMiX603GAR066HDs |
Manufacturer
|
Semikron |
Description
|
IGBT |
Published
|
Aug 8, 2014 |
Detailed Description
|
SEMiX603GAR066HDs
SEMiX® 3s
Trench IGBT Modules
SEMiX603GAR066HDs
Features
• Homogeneous Si • Trench = Trenchgate techn...
|
Datasheet
|
SEMiX603GAR066HDs
|
Overview
SEMiX603GAR066HDs
SEMiX® 3s
Trench IGBT Modules
SEMiX603GAR066HDs
Features
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature
coefficient • UL recognised file no.
E63532
Typical Applications*
• Matrix Converter • Resonant Inverter • Current Source Inverter
Remarks
• Case temperature limited to TC=125°C max.
• Product reliability results are valid for Tj=150°C
• For short circuit: Soft RGoff recommended
• Take care of over-voltage caused by stray inductance
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES IC
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
ICnom
ICRM
ICRM = 2xICnom
VGES tpsc Tj
VCC = 360 V VGE ≤ 15 V VCES ≤ 600 V
Tj = 150 °C
I...
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