ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE24283B (SPACE QUALIFIED) FEATURES • VERY LOW NOISE FIGURE: 0.
6 dB TYP at 12 GHz • HIGH ASSOCIATED GAIN: 11.
0 dB TYP at 12 GHz • GATE LENGTH: 0.
25 µm • GATE WIDTH: 200 µm • HERMETIC METAL/CERAMIC PACKAGE Optimum Noise Figure, NFOPT (dB) 1.
4 1.
2 GA 1 0.
8 0.
6 0.
4 0.
2 NF 18 15 NOISE FIGURE & ASSOCIATED GAIN vs.
FREQUENCY VDS = 2 V, IDS = 10 mA 24 21 12 9 6 3 DESCRIPTION The NE24283B is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons.
The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities.
The mushroom...

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