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NR6300EZ

Part Number NR6300EZ
Manufacturer California Eastern Labs
Description 30um InGaAs AVALANCHE PHOTO DIODE
Published Aug 11, 2014
Detailed Description PHOTO DIODE NR6300EZ  30  m InGaAs AVALANCHE PHOTO DIODE FOR OTDR APPLICATIONS DESCRIPTION The NR6300EZ is an InGaAs...
Datasheet NR6300EZ





Overview
PHOTO DIODE NR6300EZ  30  m InGaAs AVALANCHE PHOTO DIODE FOR OTDR APPLICATIONS DESCRIPTION The NR6300EZ is an InGaAs avalanche photo diode, and can be used in OTDR systems.
FEATURES • Small dark current • Small terminal capacitance • High sensitivity • High speed response • Detecting area size ID = 5 nA Ct = 0.
35 pF @ 0.
9 V(BR)R S = 0.
94 A/W @  = 1 310 nm, M = 1 fC = 2.
5 GHz MIN.
@  = 1 310 nm, M = 10  30 m Document No.
PL10701EJ02V0DS (2nd edition) Date Published January 2010 NS The mark  shows major revised points.
The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field.
NR6300EZ PACKAGE DIMENSION (UNIT: mm) 2 ...






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