Part Number
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NR6300EZ |
Manufacturer
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California Eastern Labs |
Description
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30um InGaAs AVALANCHE PHOTO DIODE |
Published
|
Aug 11, 2014 |
Detailed Description
|
PHOTO DIODE
NR6300EZ
30 m InGaAs AVALANCHE PHOTO DIODE
FOR OTDR APPLICATIONS
DESCRIPTION
The NR6300EZ is an InGaAs...
|
Datasheet
|
NR6300EZ
|
Overview
PHOTO DIODE
NR6300EZ
30 m InGaAs AVALANCHE PHOTO DIODE
FOR OTDR APPLICATIONS
DESCRIPTION
The NR6300EZ is an InGaAs avalanche photo diode, and can be used in OTDR systems.
FEATURES
• Small dark current • Small terminal capacitance • High sensitivity • High speed response • Detecting area size ID = 5 nA Ct = 0.
35 pF @ 0.
9 V(BR)R S = 0.
94 A/W @ = 1 310 nm, M = 1 fC = 2.
5 GHz MIN.
@ = 1 310 nm, M = 10
30 m
Document No.
PL10701EJ02V0DS (2nd edition) Date Published January 2010 NS
The mark shows major revised points.
The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field.
NR6300EZ
PACKAGE DIMENSION (UNIT: mm)
2
...
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