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Part Number
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NX5323EH |
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Manufacturer
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California Eastern Labs |
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Description
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LASER DIODE |
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Published
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Aug 11, 2014 |
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Detailed Description
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LASER DIODE
NX5323EH
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
DESCRIPTION
The NX5323EH is a 1 310 ...
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Datasheet
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NX5323EH
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Overview
LASER DIODE
NX5323EH
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
DESCRIPTION
The NX5323EH is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD.
This device is designed for application up to 1.
25 Gb/s.
APPLICATION
• FTTH PON (B-PON, G-PON, GE-PON 10 km) system
FEATURES
• Optical output power • Low threshold current • Differential Efficiency • InGaAs monitor PIN-PD • CAN package • Focal point Po = 13.
0 mW lth = 7 mA
ηd = 0.
5 W/A
• Wide operating temperature range TC = −40 to +85°C
φ 5.
6 mm
6.
35 mm
Document No.
PL10741EJ01V0DS (1st edition) Date Published July 2009 NS
2009
NX5323EH
PACKAGE DIMENSIONS (UNIT: mm)
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