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INCHANGE Semiconductor
isc Product Specification
isc Silicon
NPN Power
Transistor
2SD1576
DESCRIPTION ·High Collector-Base Breakdown Voltage: V(BR)CBO= 1500V (Min.
) ·High Switching Speed ·Wide Area of Safe Operation
APPLICATIONS ·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
VCES
Collector- Emitter Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current- Continuous
w
ww
s c s .
i
1500 V 1500 V 700 V 6 V 2 A 6 A 2.
5 A
n c .
i m e
ICM
Collector Current-Peak
IBM
Base Current-Peak Collector Power Dissipation @ Ta=25℃
2.
5 W
...