BUK761R8-30C
N-channel TrenchMOS standard level FET
Rev.
02 — 20 August 2007 Product data sheet
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Product profile
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1 General description
N-channel enhancement mode power Field-Effect
Transistor (FET) in a plastic package, using NXP Ultra High-Performance (UHP) automotive TrenchMOS technology.
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2 Features
175 °C rated Standard level compatible Q101 compliant TrenchMOS technology
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3 Applications
12 V loads General purpose power switching Automotive systems Motors, lamps and solenoids
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4 Quick reference data
Table 1.
ID Ptot RDSon Quick reference Conditions VGS = 10 V; Tmb = 25 °C; see Figure 1 and 4 Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figur...