BUK7Y13-40B
N-channel TrenchMOS standard level FET
Rev.
02 — 2 October 2007 Product data sheet
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Product profile
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1 General description
N-channel enhancement mode power Field-Effect
Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology.
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2 Features
I Very low on-state resistance I 175 °C rated I Q101 compliant I Standard level compatible
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3 Applications
I Automotive ABS systems I Motors, lamps and solenoids I Diesel injection systems I Automotive transmission control I Fuel pump and injection I Airbag
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4 Quick reference data
I EDS(AL)S ≤ 91 mJ I ID ≤ 55 A I RDSon = 11 mΩ (typ) I Ptot ≤ 75 W
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Pinning information
Table 1.
Pin 4 mb Pin...