PMFPB8032XP
21 December 2012
20 V, 3.
7 A / 320 mV VF P-channel MOSFET-
Schottky combination
Product data sheet
1.
General description
Small-signal P-channel enhancement mode Field-Effect
Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)
Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
2.
Features and benefits
• • • •
1.
8 V RDSon rated for low-voltage gate drive Small and leadless ultra thin SMD plastic package: 2 × 2 × 0.
65 mm Exposed drain pad for excellent thermal conduction Integrated ultra low VF MEGA
Schottky diode
3.
Applications
• • • •
Charging ...