PMZB420UN
83B
30 V, single N-channel Trench MOSFET
Rev.
1 — 11 May 2012 Product data sheet
1.
Product profile
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1 General description
N-channel enhancement mode Field-Effect
Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
SO
T8
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2 Features and benefits
Fast switching Trench MOSFET technology Low threshold voltage Ultra thin package profile with 0.
37 mm height
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3 Applications
Relay driver High-speed line driver Low-side loadswitch Switching circuits
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4 Quick reference data
Table 1.
Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage...