PMDPB56XN
020 -6
30 V, dual N-channel Trench MOSFET
Rev.
1 — 16 May 2012 Product data sheet
1.
Product profile
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1 General description
Dual N-channel enhancement mode Field-Effect
Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
DF
N2
1.
2 Features and benefits
Very fast switching Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.
65 mm Exposed drain pad for excellent thermal conduction
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3 Applications
Charging switch for portable devices DC-to-DC converters Small brushless DC motor drive Power management in battery-driven portables Ha...