SO T2 3
PMV90EN
30 V, single N-channel Trench MOSFET
Rev.
1 — 13 February 2012 Product data sheet
1.
Product profile
1.
1 General description
N-channel enhancement mode Field-Effect
Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.
2 Features and benefits
Logic-level compatible Very fast switching Trench MOSFET technology
1.
3 Applications
Relay driver High-speed line driver Low-side loadswitch Switching circuits
1.
4 Quick reference data
Table 1.
Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 10 V; Tam...