PMGD175XN
30 V, dual N-channel Trench MOSFET
Rev.
1 — 1 June 2012 Product data sheet
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Product profile
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1 General description
Dual N-channel enhancement mode Field-Effect
Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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2 Features and benefits
Very fast switching Trench MOSFET technology
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3 Applications
Relay driver High-speed line driver Low-side loadswitch Switching sircuits
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4 Quick reference data
Table 1.
Symbol Per
transistor VDS VGS ID RDSon drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 4.
5 V; Tamb = 25 °C; t ≤ 5 s VGS = 4.
5 V; ID = 1 A; Tj = 25 °C
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