BUK7Y12-55B
N-channel TrenchMOS standard level FET
Rev.
03 — 7 April 2010 Product data sheet
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Product profile
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1 General description
Standard level N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology.
This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
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2 Features and benefits
Q101 compliant Suitable for standard level gate drive sources Suitable for thermally demanding environments due to 175 °C rating
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3 Applications
12 V and 24 V loads Advanced braking systems (ABS) Automotive systems General purpose power sw...