Philips Semiconductors
Product specification
TrenchMOS
transistor Standard level FET
GENERAL DESCRIPTION
N-channel enhancement mode standard level field-effect power
transistor in a plastic envelope available in TO220AB and SOT404 .
Using ’trench’ technology which features very low on-state resistance.
It is intended for use in automotive and general purpose switching applications.
BUK7528-55A BUK7628-55A
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX.
55 41 99 175 28 UNIT V A W ˚C mΩ
PINNING TO220AB & SOT404
PIN 1 2 3 DESCRIPTION gate drain
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