|
Part Number
|
TK8P60W |
|
Manufacturer
|
Toshiba Semiconductor |
|
Description
|
Silicon N-Channel MOSFET |
|
Published
|
Aug 21, 2014 |
|
Datasheet
|
TK8P60W
|
Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.42 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.4 mA)
3. Packaging and Internal Circuit
1: Gate ...
Similar Datasheet