BUK7Y102-100B
N-channel TrenchMOS standard level FET
Rev.
03 — 7 April 2010 Product data sheet
1.
Product profile
1.
1 General description
Standard level N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology.
This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.
2 Features and benefits
Q101 compliant Suitable for standard level gate drive sources Suitable for thermally demanding environments due to 175 °C rating
1.
3 Applications
12 V, 24 V and 42 V loads Automotive systems DC-to-DC converters General purpose power switc...