PMZB950UPE
28 July 2014
SO
T8 83 B
20 V, P-channel Trench MOSFET
Product data sheet
1.
General description
P-channel enhancement mode Field-Effect
Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits
• • • •
Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.
0 × 0.
6 × 0.
37 mm ElectroStatic Discharge (ESD) protection 1 kV HBM Drain-source on-state resistance RDSon = 1.
02 Ω
3.
Applications
• • • •
Relay driver High-speed line driver High-side load switch Switching circuits
4.
Quick reference data
Table 1.
Symbol VDS VGS ID RDSon Quick refer...