NXS7002AK
25 September 2012
60 V, single N-channel Trench MOSFET
Product data sheet
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Product profile
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1 General description
N-channel enhancement mode Field-Effect
Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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2 Features and benefits • Very fast switching • Trench MOSFET technology • ESD protected up to 400 V 1.
3 Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 1.
4 Quick reference data
Table 1.
Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = 10 V; Tamb = 25 °C VGS = 10 V; ID = 100 mA; Tj = 25 °C...