PMDPB70XPE
020 -6
20 V dual P-channel Trench MOSFET
Rev.
1 — 20 June 2012 Product data sheet
1.
Product profile
1.
1 General description
Dual small-signal P-channel enhancement mode Field-Effect
Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
DF
N2
1.
2 Features and benefits
Very fast switching Trench MOSFET technology 2 kV ElectroStatic Discharge (ESD) protection
1.
3 Applications
Relay driver High-speed line driver High-side load switch Switching circuits
1.
4 Quick reference data
Table 1.
Symbol Per
transistor VDS VGS ID RDSon drain-source voltage gate-source voltage drain current...