PMK35EP
P-channel TrenchMOS extremely low level FET
Rev.
02 — 29 April 2010 Product data sheet
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Product profile
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1 General description
Extremely low level P-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using TrenchMOS technology.
This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
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2 Features and benefits
Low conduction losses due to low on-state resistance
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3 Applications
Battery management Load switching
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4 Quick reference data
Table 1.
Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance ...