SO T6
NX3008CBKV
30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET
Rev.
1 — 29 July 2011 Product data sheet
1.
Product profile
1.
1 General description
Complementary N/P-channel enhancement mode Field-Effect
Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
66
1.
2 Features and benefits
Low threshold voltage Very fast switching Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified
1.
3 Applications
Level shifter Power supply converter Load switch Switching circuits
1.
4 Quick reference data
Table 1.
Symbol VDS VGS ID VDS VGS ID RDSon Quick reference data Parameter drain-sour...