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IPD30N03S4L-09

Part Number IPD30N03S4L-09
Manufacturer Infineon
Description Power-Transistor
Published Aug 25, 2014
Detailed Description IPD30N03S4L-09 OptiMOS®-T2 Power-Transistor Product Summary V DS R DS(on),max ID 30 9.0 30 PG-TO252-3-11 V mΩ A Featu...
Datasheet IPD30N03S4L-09




Overview
IPD30N03S4L-09 OptiMOS®-T2 Power-Transistor Product Summary V DS R DS(on),max ID 30 9.
0 30 PG-TO252-3-11 V mΩ A Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested Type IPD30N03S4L-09 Package PG-TO252-3-11 Marking 4N03L09 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic cat...






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