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INCHANGE Semiconductor
isc Product Specification
isc Silicon
NPN Power
Transistor
2SD1517
DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.
5V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V (Min) ·Good Linearity of hFE ·High Speed Switching
APPLICATIONS ·Designed for power amplifier,power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
w w
s c s i .
w
VALUE UNIT 130 V 80 V 7 V 2 A 5 A 25 W
n c .
i m e
IC
Collector Current-Continuous
ICM
Collector Current-Peak Collector Power Dissipation @ TC=25℃
PC Collector Power ...