TPCP8204
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (U-MOS Ⅳ)
TPCP8204
Portable Equipment Applications Motor Drive Applications
• Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.
)
（VGS=10V） • High forward transfer admittance:|Yfs| = 8 S (typ.
) • Low leakage current: IDSS = 10 μA (VDS = 30 V) • Enhancement mode: Vth = 1.
3 to 2.
5 V (VDS = 10 V, ID = 1mA)
Absolute Maximum Ratings (Ta = 25°C)
0.
33±0.
05
0.
05 M A
8
5
Unit: mm
2.
4±0.
1 2.
8±0.
1
0.
475 1
4
0.
65
2.
9±0.
1
S
0.
025 S 0.
17±0.
02
B
0.
05 M B
A
0.
8±0.
05
0.
28
+0.
1 -0.
11
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = ...