Part Number
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M29W256GL |
Manufacturer
|
Micron Technology |
Description
|
Parallel NOR Flash Embedded Memory |
Published
|
Aug 28, 2014 |
Detailed Description
|
256Mb: 3V Embedded Parallel NOR Flash Features
Parallel NOR Flash Embedded Memory
M29W256GH, M29W256GL Features
• Suppl...
|
Datasheet
|
M29W256GL
|
Overview
256Mb: 3V Embedded Parallel NOR Flash Features
Parallel NOR Flash Embedded Memory
M29W256GH, M29W256GL Features
• Supply voltage – VCC = 2.
7–3.
6V (program, erase, read) – VCCQ = 1.
65–3.
6V (I/O buffers) – VPPH = 12V for fast program (optional) • Asynchronous random/page read – Page size: 8 words or 16 bytes – Page access: 25ns, 30ns – Random access: 60ns1, 70ns, 80ns • Fast program commands: 32-word (64-byte) write buffer • Enhanced buffered program commands: 256-word • Program time – 16µs per byte/word TYP – Chip program time: 10s with V PPH and 16s without V PPH • Memory organization – Uniform blocks: 256 main blocks, 128KB, or 64Kwords each • Program/erase controller – Embedded byte/word ...
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