TPN22006NH
MOSFETs Silicon N-channel MOS (U-MOS-H)
TPN22006NH
1.
Applications
• • • Switching Voltage
Regulators Motor Drivers DC-DC Converters
2.
Features
(1) (2) (3) (4) (5) (6) Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 4.
5 nC (typ.
) Low drain-source on-resistance: RDS(ON) = 18 mΩ (typ.
) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 0.
1 mA)
3.
Packaging and Internal Circuit
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
TSON Advance
Start of commercial production
1
2012-08 2014-01-07 Rev.
2.
0
TPN22006NH
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified...