Part Number
|
TPN2R503NC |
Manufacturer
|
Toshiba |
Description
|
MOSFETs |
Published
|
Aug 29, 2014 |
Detailed Description
|
TPN2R503NC
MOSFETs Silicon N-channel MOS (U-MOS)
TPN2R503NC
1. Applications
• Power Management Switches
2. Features
(...
|
Datasheet
|
TPN2R503NC
|
Overview
TPN2R503NC
MOSFETs Silicon N-channel MOS (U-MOS)
TPN2R503NC
1.
Applications
• Power Management Switches
2.
Features
(1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 2.
1 mΩ (typ.
) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.
3 to 2.
3 V (VDS = 10 V, ID = 0.
5 mA)
3.
Packaging and Internal Circuit
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
TSON Advance
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Power dissip...
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