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TPN6R303NC

MOSFETs

Description

TPN6R303NC MOSFETs Silicon N-channel MOS (U-MOS) TPN6R303NC 1. Applications • • Lithium-Ion Secondary Batteries Power Management Switches 2. Features (1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 5.2 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V,...


Toshiba

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