Part Number
|
TPC8058-H |
Manufacturer
|
Toshiba Semiconductor |
Description
|
MOSFETs |
Published
|
Aug 30, 2014 |
Detailed Description
|
TPC8058-H
MOSFETs Silicon N-Channel MOS (U-MOS-H)
TPC8058-H
1. Applications
• • • High-Efficiency DC-DC Converters Not...
|
Datasheet
|
TPC8058-H
|
Overview
TPC8058-H
MOSFETs Silicon N-Channel MOS (U-MOS-H)
TPC8058-H
1.
Applications
• • • High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets
2.
Features
(1) (2) (3) (4) (5) (6) Small footprint due to a small and thin package High-speed switching Small gate change: QSW = 12 nC (typ.
) Low drain-source on-resistance: RDS(ON) = 3.
2 mΩ (typ.
) (VGS = 4.
5 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.
3 to 2.
3 V (VDS = 10 V, ID = 0.
5 mA)
3.
Packaging and Internal Circuit
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
SOP-8
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain cu...
Similar Datasheet
- TPC8058-H MOSFETs - Toshiba Semiconductor