TPC8051-H
TOSHIBA Field Effect
Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)
TPC8051-H
Switching
Regulator Applications Motor Drive Applications DC-DC Converter Applications
• • • • • • • Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 16 nC (typ.
) Low drain-source ON-resistance: RDS (ON) = 6.
3 mΩ (typ.
) High forward transfer admittance: |Yfs| = 45 S (typ.
) Low leakage current: IDSS = 10 μA (max) (VDS = 80 V) Enhancement mode: Vth = 1.
3 to 2.
3 V (VDS = 10 V, ID = 1.
0 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS ...