MOSFETs Silicon N-channel MOS (U-MOS-H)
TK30E06N1
1.
Applications
• Switching Voltage
Regulators
2.
Features
(1) Low drain-source on-resistance: RDS(ON) = 12.
2 mΩ (typ.
) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (3) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 0.
2 mA)
3.
Packaging and Internal Circuit
TK30E06N1
1: Gate 2: Drain (heatsink) 3: Source
TO-220
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
60
V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Silicon limit) (Note 1), (Note 2)
ID
43
A
Drain current (DC)
(Note 1), (Note 3)
ID
30
Drai...