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Part Number
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TK30J25D |
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Manufacturer
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Toshiba Semiconductor |
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Description
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Silicon N-Channel MOSFET |
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Published
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Sep 5, 2014 |
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Datasheet
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TK30J25D
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Features
(1) Low drain-source on-resistance: RDS(ON) = 0.046 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK30J25D
1: Gate (G) 2: Drain ...
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