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Part Number
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TK60S06K3L |
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Manufacturer
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Toshiba Semiconductor |
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Description
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Silicon N-Channel MOSFET |
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Published
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Sep 5, 2014 |
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Datasheet
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TK60S06K3L
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Features
(1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 6.4 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circui...
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