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Part Number
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TK4P55D |
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Manufacturer
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Toshiba Semiconductor |
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Description
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Silicon N-Channel MOSFET |
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Published
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Sep 5, 2014 |
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Datasheet
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TK4P55D
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Features
(1) Low drain-source on-resistance : RDS(ON) = 1.5 Ω (typ.) (2) High forward transfer admittance : |Yfs| = 2.0 S (typ.) (3) Low leakage current : IDSS = 10 µA (max) (VDS = 550 V) (4) Enhancement mode : Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
3. Pa...
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