MOSFETs Silicon N-Channel MOS (π-MOS)
TK4P55DA
1.
Applications
• Switching Voltage
Regulators
2.
Features
(1) Low drain-source on-resistance : RDS(ON) = 2.
0 Ω (typ.
) (2) High forward transfer admittance : |Yfs| = 1.
8 S (typ.
) (3) Low leakage current : IDSS = 10 µA (max) (VDS = 550V) (4) Enhancement mode : Vth = 2.
4 to 4.
4 V (VDS = 10 V, ID = 1 mA)
3.
Packaging and Internal Circuit
TK4P55DA
DPAK
1: Gate 2: Drain (Heatsink) 3: Source
Start of commercial production
2009-12
1
2015-03-06
Rev.
1.
0
TK4P55DA
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
550
V
Gate-source voltage
VGSS
±30
Dra...