MOSFETs Silicon P-Channel MOS (U-MOS)
TJ50S06M3L
1.
Applications
• Automotive • Motor Drivers • DC-DC Converters • Switching Voltage
Regulators
2.
Features
(1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 10.
3 mΩ (typ.
) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) (4) Enhancement mode: Vth = -2.
0 to -3.
0 V (VDS = -10 V, ID = -1 mA)
3.
Packaging and Internal Circuit
TJ50S06M3L
DPAK+
1: Gate 2: Drain (heatsink) 3: Source
©2020 Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2011-03
2020-06-24 Rev.
7.
0
TJ50S06M3L
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Sym...