TJ40S04M3L
MOSFETs Silicon P-Channel MOS (U-MOS)
TJ40S04M3L
1.
Applications
• • • • Automotive Motor Drivers DC-DC Converters Switching Voltage
Regulators
2.
Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 7.
0 mΩ (typ.
) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) Enhancement mode: Vth = -2.
0 to -3.
0 V (VDS = -10 V, ID = -1 mA)
3.
Packaging and Internal Circuit
1: Gate 2: Drain (heatsink) 3: Source
DPAK+
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Channel ...