MOSFETs Silicon N-channel MOS (U-MOS-H)
TK55S10N1
1.
Applications
• Automotive • Switching Voltage
Regulators • Motor Drivers
2.
Features
(1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 5.
5 mΩ (typ.
) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 0.
5 mA)
3.
Packaging and Internal Circuit
TK55S10N1
1: Gate 2: Drain (heatsink) 3: Source
DPAK+
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Sing...