Transistors
2SC1360, 2SC1360A
Silicon
NPN epitaxial planar type
For intermediate frequency amplification of TV image
5.
9±0.
2
Unit: mm
4.
9±0.
2
■ Features
8.
6±0.
2
• High transition frequency fT
• Large collector power dissipation PC
13.
5±0.
5 0.
7–+00.
.
23
0.
7±0.
1
■ Absolute Maximum Ratings Ta = 25°C
/ Parameter
Symbol Rating
Unit
e Collector-base voltage 2SC1360 VCBO
50
V
pe) (Emitter open)
2SC1360A
60
nc d ge.
ed ty Collector-emitter voltage 2SC1360 VCEO
45
(3.
2)
V
sta tinu (Base open)
2SC1360A
60
a e cycle iscon Emitter-base voltage (Collector open) VEBO
4
V
life d, d Collector current
IC
50
mA
n u duct type Collector power dissipation
PC
1
W
te tin Pro ed...