TK12X53D
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK12X53D
Switching
Regulator Applications
9.
2 MAX.
Unit: mm
7.
0 ± 0.
2 4 0.
8 MAX.
2.
5 0.
7 MAX.
9.
2 MAX.
2.
0 1.
5 2.
0 0.
4 ± 0.
1
• • • •
Low drain-source ON resistance: RDS (ON) = 0.
5 Ω (typ.
) High forward transfer admittance: ⎪Yfs⎪ = 6.
0 S (typ.
) Low leakage current: IDSS = 10 μA (max) (VDS = 525 V) Enhancement-mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 525 ±30 12 48 150 378 12 15 150 −55 to 150 Unit V V A W mJ A mJ °C °C...